ion implantation of silicon nitride for rolling element

CN105185747A

The silicon nitride barrier layer can block the ion implantation especially can block the metal impurities introduced by the metal elements volatilized by the electronic shower during a high energy ion implantation process at the same time can reduce the crystal lattice defects caused by an arc effect when the ions are implanted in a shallow

D

of a silicon nitride/silicon interface rigorously free from contamination and I from damage due to sputtering or ion implantation In the Si(LVV) Auger spectrum of silicon nitride a strong peak at 83 eV predominates the 91-eV peak characteristic of clean Si vanishes entirely for sufficiently thick nitride

Formation and bonding structure of silicon nitride by 20

The nitridation process and the annealing effects for Si‐nitride layers prepared by 20‐keV nitrogen ion implantation have been investigated by means of x‐ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) The surface layer of samples implanted at a low dose is composed of a mixture of elemental Si regions and Si‐rich nitride regions

Revised In vivo biostability of CVD silicon oxide and si

applications silicon oxide and silicon nitride films have been combined to act as a barrier to ion transport [4] or to balance opposing residual stresses [5] Silicon oxide and silicon nitride are known to dissolve in aqueous media [6-8] At the hydrated surface of the film silicon oxide dissolves to form aqueous Si(OH)4 Si-O bonds

Ion implant compensation of tensile stress in thick

High‐energy ion implantation can compensate the tensile stress in thick silicon nitride films We investigated the relationship between the compensated stress in the silicon nitride films and ion implantation parameters like ion energy dose and kind of ions as well as the influence of different annealing temperatures We developed the technique of stress compensation for silicon‐nitride

3D Free‐Form Patterning of Silicon by Ion Implantation

The fabrication is based on alternating steps of chemical vapor deposition of silicon and local implantation of gallium ions by focused ion beam (FIB) writing In a final step the defined 3D structures are formed by etching the silicon in potassium hydroxide (KOH) in which the local ion implantation provides the etching selectivity

Anisotropic Vapor HF etching of silicon dioxide for Si

II VHF etch of implanted silicon dioxide Ion implantation is a process by which ions with high energy are introduced into another solid thus changing the physical and chemical properties of the solid The introduction of impurities in a semiconductor is the most common application of ion implantation The three main consequences of

Low Energy Implantation of Nitrogen and Ammonia into Silicon

Abstract Thin dielectrics have recently attracted increasing attention New methods to form thin silicon nitride films have been studied [1 2] This paper reports on silicon nitride formation by low energy implantation of nitrogen or ammonia into silicon

Focused ion beam induced deflections of freestanding thin

high-stress silicon nitride is remarkably flat-topped and differs from that in low-stress silicon nitride Ion beam induced biaxial compressive stress generation which is a known deformation mechanism for other amorphous materials at higher ion energies is hypothesized to be the origin of the deflection

Modification of amorphous silicon nitride surfaces by ion

To this end hydrogenated amorphous silicon nitride (a-SiN_x:H_y) has been deposited as the starting material using PECVD (plasma enhanced chemical vapour deposition) Then the effects of implanting gallium into the a-SiN_x:H target material have been studied with the aim of forming GaN compounds

Modification of amorphous silicon nitride surfaces by ion

To this end hydrogenated amorphous silicon nitride (a-SiN_x:H_y) has been deposited as the starting material using PECVD (plasma enhanced chemical vapour deposition) Then the effects of implanting gallium into the a-SiN_x:H target material have been studied with the aim of forming GaN compounds

Formation of boron nitride and silicon nitride bilayer

Formation of boron nitride and silicon nitride bilayer films by ion-beam-enhanced deposition Formation of boron nitride and silicon nitride bilayer films by ion-beam-enhanced deposition Feng Yi P 1991-11-01 00:00:00 ABSTRACT Bilayer thin films of boron nitride and silicon nitride were prepared by sequential electron beam evaporation of Si or B and simultaneous irradiation with nitrogen ions

Behavior of Transition Metals Penetrating Silicon

Nov 30 2019After ion implantation the amount of all metals on the surface was reduced 15–25% Some of surface metals are considered to penetrate silicon and others will be sputtered and disappeared Average surface metallic concentration of the silicon wafers before/after ion implantation followed by annealing at 950C for 10 min is shown in Fig 2b

Formation of boron nitride and silicon nitride bilayer

Formation of boron nitride and silicon nitride bilayer films by ion-beam-enhanced deposition Formation of boron nitride and silicon nitride bilayer films by ion-beam-enhanced deposition Feng Yi P 1991-11-01 00:00:00 ABSTRACT Bilayer thin films of boron nitride and silicon nitride were prepared by sequential electron beam evaporation of Si or B and simultaneous irradiation with nitrogen ions

Depth profiling of a silicon nitride layer by 20 keV N+2

The chemical composition profile of a nitride layer obtained by 20 keV N+2 ion implantation through an oxide layer was determined by x‐ray photoelectron spectroscopy at two different analysis angles The nitrogen concentration shows a plateau followed by a slow decrease Oxygen presumably due to a recoil implantation is always present in the nitride layer in exponentially decreasing amounts

First synthesis of silicon nanocrystals in amorphous

now the fabrication methods of nc-Si in silicon nitride matrix rely mainly on physical deposition (e g thermal [47] or plasma enhanced [9 10 30 49] chemical vapor deposition electron beam evaporation [45] ion implantation and annealing [26]) others are of research interest only (like

Ion implantation of silicon nitride ball bearings

May 01 1997A program has existed for determination of the effect of ion implantation on the rolling contact performance of silicon nitride ball bearings The hypothesis was that stress concentrations reflected into the bulk due to topography such as polishing imperfections texture in the race or transferred material might be reduced due to surface amorphization

Ion Implantation

Ion implantation of oxygen or nitrogen into silicon at doses high enough to produce stoichiometric SiO 2 or Si 3 N 4 has been reported since the mid 1960s (Watanabe and Tooi 1966 Pavlov and Shitova 1967) Such implants require extremely high doses compared to implanting dopants

Study of Silicon Nitride Inner Spacer Formation in Process

nanomaterials Article Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors Junjie Li 1 2 * Yongliang Li 1 Na Zhou 1 Wenjuan Xiong 1 2 Guilei Wang 1 2 * Qingzhu Zhang 1 3 Anyan Du 1 Jianfeng Gao 1 Zhenzhen Kong 1 Hongxiao Lin 1 Jinjuan Xiang 1 Chen Li 1 2 Xiaogen Yin 1 2 Xiaolei Wang 1 Hong Yang 1 Xueli Ma 1

Wet oxidation of nitride layer implanted with low

proposed This method combines low-energy 1 keV silicon ion implantation into a thin nitride-oxide stack and subsequent low-temperature wet oxidation 850 C for 15 min Transmission electron microscopy shows that for an implanted dose of 1 5 1610 Si cm−2 an 8-nm-thick silicon oxide layer develops on the surface of the nitride-oxide stack

AN INVESTIGATION OF NITROGEN

X-ray Photoelectron Spectroscopy (XPS) was used in order to investigate the chemical composition both at the surface and in depth across the layers of a series of trilayer SiO 2/Si 3N4/Al 2O3 stacks grown on silicon wafers and then modified by low-energy nitrogen ion implantation followed by PIA at three different temperatures

Low Energy Implantation of Nitrogen and Ammonia into Silicon

Abstract Thin dielectrics have recently attracted increasing attention New methods to form thin silicon nitride films have been studied [1 2] This paper reports on silicon nitride formation by low energy implantation of nitrogen or ammonia into silicon

Study of buried silicon nitride layers synthesized by ion

The formation of buried layers of silicon nitride by nitrogen-ion implantation in single-crystal silicon is studied He + backscattering x-ray diffraction scanning and transmission electron microscopies and infrared absorption measurements were used for the physico-chemical characterization sheet resistivity determination spreading-resistance profile and current-voltage characteristics

Open Research: Ion implantation for silicon solar cells

Ratcliff Thomas James Description Ion implantation is investigated as a method for forming the heavily doped regions of silicon solar cells Research is conducted with the aim of implementing ion implantation into the fabrication process of the Australian National University's interdigitated back contact and Sliver solar cell designs

Transition Metal Ion Implantation into Diamond

Ion Implantation The use of ion implantation for doping processes is well established and has several advantages compared to other techniques such as high reproducibility processing near room temperature ability to implant any element impurity free into solid substrates (with absence of hydrogen nitrogen and oxygen) and avoiding chemical

of LPCVD Silicon Implantation

Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials Hamamatsu 1997 pp 404-405 Stress Elimination of LPCVD Silicon Nitride Films by Low-Dose lon Implantation Ichiro Yamamoto and Shozo Nishimoto ULSI Device Development l-aboratories NEC Corporation 7720 Shimokuzawa Sagamihara Kanagawa 229 Japan phone/Fax : + 81 427 -7 9